combined magnetron sputtering and pulsed laser deposition of tio 2 and bfco thin films
And RF sputtering (MS)
High quality films are deposited.
At the same time, the same target can be used to improve the deposition rate and achieve MS.
The performance of this technology through the deposition of titanium dioxide and bismouth-
The base perovskite oxide NIO fecoro6 (BFCO)
Film on Si (100)and LaAlO3 (LAO)(100).
These specific oxides are selected due to their functions, such as multi-iron and photovoltaic properties (BFCO)
And catalysis (TiO2).
We compare the films deposited by the combination of traditional programmable logic devices, MS and programmable logic devices with MS, and show that the latter technology provides a higher deposition rate under all conditions (+50%)
And produce films with high density (+20%)
Larger clusters than produced separately by MS or ld and not found in ldDeposited film.
Under optimized conditions, the film produced by the mixing technology is twice smoother than that produced by the individual.
The growth of film and nano-structures can be achieved using a variety of techniques, among which the most successful techniques also allow custom structures to optimize optical, electrical, friction, and other properties.
These properties depend, among other things, primarily on the density of the film, the surface morphology, and the crystal structure.
In various deposition technologies, physical vapor deposition (PVD)
Film production technology has been widely used in many industrial sectors.
()MS)is a thin-
It is widely used in film Physical deposition technology for synthesis of highly uniform and smooth films at large surface area.
It has several advantages over thermal or electronic devices
Since the higher energy in the MS atoms can improve adhesion and help to determine the thin film structure of the deposition, the beam deposition technology is therefore.
If it is possible to reduce the working pressure of the MS, the control of the deposition process can be further improved, which is usually within the range of several to dozens of mTorr.
The minimum pressure required for conventional MS systems is defined by the ionization rate in the plasma.
Working at higher pressures has a direct effect on the structure and density of the deposited film, as the sputtering species lose part of their energy by interacting with the background gas molecules.
Pulse Laser Deposition (PLD)
It is another important physical deposition technology for film and nano structure growth, which can be applied under any pressure to provide more versatility.
Ability to control background pressure and substrate-to-
The target distance makes it possible to control the density of deposited films.
However, despite its wide popularity and widespread use in the research community, it faces some challenges related to large-scale expansionArea deposition.
Another drawback is the large clusters that are often formed during ablation;
These clusters can introduce undesirable non-uniformity and roughness in the film.
The reduction of the energy density of the pulse laser helps to reduce or eliminate the formation of macro particles, but also reduces the deposition rate.
Several methods and techniques have been developed to address these challenges related to film quality in MS and programmable logic devices.
Non-equilibrium magnetic control sputtering of high-power pulse MS (HIPIMS)
Recent developments can improve certain properties of deposited films.
Technologies to overcome the limitations of programmable logic devices in large-scale surface applications are also presented and demonstrated.
A promising method is to combine RF sputtering with pulsed laser deposition (MSPLD)
Hybrid power system.
In most of the implementation, the mslld includes the use of two goals (
1 for sputtering, 1 for ld)
Can be used at the same time.
This technique provides hope for the preparation of functional gradient transition metal carbide and multi-layer structure in TiC and Diamondlike carbon (DLC)
Material systems and other nano-composites.
Another hybrid method is to combine programmable logic devices with RF (RF)
On the substrate, the RF power applied on the substrate can be used to control the composition and crystal properties of the film.
Here we implement a different hybrid approach, bypassing some of the limitations of traditional MS and programmable logic devices by using a goal for MS and programmable logic devices.
In this hybrid method, the pulse laser can be used to trigger and maintain the magnetic tube discharge at lower pressure, adding another control mechanism to adjust the structure of the deposited film.
In order to demonstrate the advantages of the hybrid technology, we have studied in Si (100)
, And the growth of the complex bismouth-
Bifiecro (BFCO)on LaAlO (LAO)(100).
TiO is a widely studied semiconductor material with attractive properties such as high refractive index, wide band gap and optical catalytic properties.
BFCO has been widely studied recently due to its many
Iron and light volts.
We investigated the effects of substrate temperature, working pressure, pulse laser and MS power density on the performance of the film and optimized the power efficiency.
Our results show that the mixing technology can improve the quality of the deposited film and improve the uniformity and deposition rate of the film.